JPH0563942B2 - - Google Patents
Info
- Publication number
- JPH0563942B2 JPH0563942B2 JP58127688A JP12768883A JPH0563942B2 JP H0563942 B2 JPH0563942 B2 JP H0563942B2 JP 58127688 A JP58127688 A JP 58127688A JP 12768883 A JP12768883 A JP 12768883A JP H0563942 B2 JPH0563942 B2 JP H0563942B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transistor
- integrated circuit
- semiconductor substrate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58127688A JPS6021553A (ja) | 1983-07-15 | 1983-07-15 | 三次元集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58127688A JPS6021553A (ja) | 1983-07-15 | 1983-07-15 | 三次元集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6021553A JPS6021553A (ja) | 1985-02-02 |
JPH0563942B2 true JPH0563942B2 (en]) | 1993-09-13 |
Family
ID=14966240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58127688A Granted JPS6021553A (ja) | 1983-07-15 | 1983-07-15 | 三次元集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6021553A (en]) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61180466A (ja) * | 1985-02-06 | 1986-08-13 | Agency Of Ind Science & Technol | 積層型半導体装置 |
US4679299A (en) * | 1986-08-11 | 1987-07-14 | Ncr Corporation | Formation of self-aligned stacked CMOS structures by lift-off |
JP2516604B2 (ja) * | 1986-10-17 | 1996-07-24 | キヤノン株式会社 | 相補性mos集積回路装置の製造方法 |
US4875086A (en) * | 1987-05-22 | 1989-10-17 | Texas Instruments Incorporated | Silicon-on-insulator integrated circuits and method |
US5168078A (en) * | 1988-11-29 | 1992-12-01 | Mcnc | Method of making high density semiconductor structure |
US5025304A (en) * | 1988-11-29 | 1991-06-18 | Mcnc | High density semiconductor structure and method of making the same |
JPH0351312A (ja) * | 1989-07-14 | 1991-03-05 | Unitika Ltd | 白度の向上した蓄熱保温性繊維 |
JP4238998B2 (ja) * | 2004-03-18 | 2009-03-18 | セイコーエプソン株式会社 | 電気デバイス |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5839030A (ja) * | 1981-08-31 | 1983-03-07 | Matsushita Electric Ind Co Ltd | 半導体装置 |
-
1983
- 1983-07-15 JP JP58127688A patent/JPS6021553A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6021553A (ja) | 1985-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3220813B2 (ja) | 二重垂直チャネルを有するsram及びその製造方法 | |
JPH0746702B2 (ja) | 半導体記憶装置 | |
JPH0714009B2 (ja) | Mos型半導体記憶回路装置 | |
JPS6321351B2 (en]) | ||
JPH0563942B2 (en]) | ||
JPH0527267B2 (en]) | ||
JPS62174968A (ja) | 半導体装置 | |
JP2690242B2 (ja) | 半導体固定記憶装置 | |
JPH0438141B2 (en]) | ||
JPH02246264A (ja) | 半導体装置およびその製造方法 | |
JPH02295164A (ja) | 半導体メモリ | |
JPH0438140B2 (en]) | ||
JP3227754B2 (ja) | 半導体記憶装置とその製法 | |
JP2531345B2 (ja) | 半導体記憶装置 | |
JP2751658B2 (ja) | 半導体装置 | |
JP2610968B2 (ja) | 半導体装置 | |
JPH06103741B2 (ja) | 半導体記憶装置 | |
JP3302989B2 (ja) | 半導体装置 | |
JP2663953B2 (ja) | 半導体装置 | |
JPS5814072B2 (ja) | 半導体集積回路装置及びその製法 | |
JP3070060B2 (ja) | 半導体メモリ | |
JPS63182859A (ja) | 半導体集積回路装置 | |
JPH0517701B2 (en]) | ||
JPS592363A (ja) | 相補型絶縁ゲート電界効果型装置 | |
JP2876673B2 (ja) | 半導体メモリ |